STD1703L

2/10

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

(1) ISD ≤17A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

(2) Starting Tj=25°C, ID=11A, VDD=15V

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE =25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

30

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

30

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC =25°C

17

A

ID

Drain Current (continuous) at TC = 100°C

12

A

IDM ( )

Drain Current (pulsed)

68

A

PTOT

Total Dissipation at TC =25°C

20

W

Derating Factor

0.13

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

6

V/ns

EAS (2)

Single Pulse Avalanche Energy

200

mJ

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

Rthj-case

Thermal Resistance Junction-case Max

7.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

275

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID=250 µA, VGS=0

30

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS=Max Rating

1µA

VDS=Max Rating,TC= 125°C

10

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 15V

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID =250µA

1V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID =8.5 A

0.038

0.05

Ω

VGS =5 V, ID =8.5 A

0.045

0.06

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance VDS >ID(on) xRDS(on)max,

ID =11A

7S

Ciss

Input Capacitance

VDS=25V, f=1 MHz, VGS=0

330

pF

Coss

Output Capacitance

90

pF

Crss

Reverse Transfer

Capacitance

40

pF