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STD65N55 数据表(PDF) 5 Page - STMicroelectronics

部件名 STD65N55
功能描述  N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD65N55 数据表(HTML) 5 Page - STMicroelectronics

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STD65N55
Electrical characteristics
5/11
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 3)
20
50
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 3)
35
11.5
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test condictions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Source-drain current
Source-drain current (pulsed)
65
260
A
A
VSD
Forward on voltage
ISD = 65A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 65A, VDD = 30V
di/dt = 100A/µs,
Tj = 150°C(see Figure 5)
47
87
3.7
ns
nC
A



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