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STDLED624 数据表(PDF) 3 Page - STMicroelectronics

部件名 STDLED624
功能描述  N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STDLED624 数据表(HTML) 3 Page - STMicroelectronics

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DocID024407 Rev 1
3/22
STDLED624, STFILED624, STPLED624, STULED624
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK,
IPAK
I2PAKFP
TO-220
VDS
Drain-source voltage (VGS = 0)
620
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
4.0
4.0 (1)
1.
Limited by package.
4.0
A
ID
Drain current (continuous) at TC = 100 °C
2.5
2.5 (1)
2.5
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
14
14(1)
14
A
PTOT
Total dissipation at TC = 25 °C
45
20
45
W
Derating factor
0.36
0.16
0.36
W/°C
ESD
Gate-source human body model
(C = 100 pF, R = 1.5 k
Ω)
2.5
kV
dv/dt (3)
3.
ISD ≤ 2.7 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
9
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
TO-220 DPAK
IPAK
I2PAKFP
Unit
Rthj-case Thermal resistance junction-case max
2.78
6.25
°C/W
Rthj-pcb
(1)
1.
When mounted on 1 inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max
50
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Max. value
Unit
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
2.7
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
100
mJ
Obsolete
Product(s)
- Obsolete
Product(s)



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