October 2015

DocID028478 Rev 1

1/11

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

www.st.com

STF260N4F7

N-

channel 40 V, 1.95 mΩ typ., 90 A, STripFET™ F7

Power MOSFET in a TO-220FP package

Datasheet - preliminary data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STF260N4F7

40 V

2.5 mΩ

35 W



Among the lowest RDS(on) on the market



Excellent figure of merit (FoM)



Low Crss/Ciss ratio for EMI immunity



High avalanche ruggedness

Applications



Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

Package

Packaging

STF260N4F7

260N4F7

TO-220FP

Tube

TO-220FP