IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN 44N80

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

V

32

50

S

C

iss

10000

pF

C

oss

V

GS

= 0 V, V

1300

pF

C

rss

330

pF

t

d(on)

35

ns

t

r

V

GS

= 10 V, V

48

ns

t

d(off)

R

100

ns

t

f

24

ns

Q

g(on)

380

nC

Q

gs

V

GS

= 10 V, V

70

nC

Q

gd

170

nC

R

thJC

0.18 K/W

R

thCK

0.05

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

TestConditions

min.

typ. max.

I

S

V

44

A

I

SM

Repetitive;

176

A

pulse width limited by T

JM

V

SD

I

1.3

V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

250

ns

Q

RM

I

1.2

mC

I

RM

8A

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004