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STI11NM80 数据表(PDF) 9 Page - STMicroelectronics |
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STI11NM80 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 22 page ![]() STB/F/I/P/W11NM80 Test circuits Doc ID 9241 Rev 11 9/22 3 Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped inductive load test circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform AM01468v1 VGS PW VD RG RL D.U.T. 2200 μF 3.3 μF VDD AM01469v1 VDD 47k Ω 1k Ω 47k Ω 2.7k Ω 1k Ω 12V Vi=20V=VGMAX 2200 μF PW IG=CONST 100 Ω 100nF D.U.T. VG AM01470v1 A D D.U.T. S B G 25 Ω A A B B RG G FAST DIODE D S L=100 μH μF 3.3 1000 μF VDD AM01471v1 Vi Pw VD ID D.U.T. L 2200 μF 3.3 μF VDD AM01472v1 V(BR)DSS VDD VDD VD IDM ID AM01473v1 VDS ton tdon tdoff toff tf tr 90% 10% 10% 0 0 90% 90% 10% VGS |
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