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STP11NM80 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP11NM80
功能描述  N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP11NM80 数据表(HTML) 3 Page - STMicroelectronics

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STB/F/I/P/W11NM80
Electrical ratings
Doc ID 9241 Rev 11
3/22
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK, I²PAK
TO-220, TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
800
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
11
11 (1)
1.
Limited only by the maximum temperature allowed
A
ID
Drain current (continuous) at TC=100 °C
8
8 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
44
44 (1)
A
PTOT
Total dissipation at TC = 25 °C
150
35
W
Derating factor
1.2
0.28
W/°C
VISO
Insulation withstand voltage (DC)
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-65 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK TO-220FP I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-case
max
0.83
3.6
0.83
°C/W
Rthj-a
Thermal resistance junction-
ambient max
62.5
50
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb
max
30
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
400
mJ



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