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STGD3HF60HD 数据表(PDF) 7 Page - STMicroelectronics

部件名 STGD3HF60HD
功能描述  4.5 A, 600 V very fast IGBT with Ultrafast diode
PDF  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD3HF60HD 数据表(HTML) 7 Page - STMicroelectronics

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STGD3HF60HD
Electrical characteristics
Doc ID 17690 Rev 3
7/16
Figure 8.
Gate threshold voltage vs
temperature
Figure 9.
Gate charge vs gate-emitter
voltage
Figure 10.
Capacitance variations
Figure 11.
Switching losses vs collector
current
Figure 12.
Switching losses vs gate resistence Figure 13.
Switching losses vs temperature
VGE(th)
5.0
4.5
4.0
3.5
-50
0
TJ(°C)
(V)
50
100
VGE=VCE
IC=250µA
AM08830v1
VGE
15
10
5
0
0
4
Qg(nC)
(V)
8
12
VCC=480V
IC=1.5A
AM08831v1
C
150
100
50
0
0
20
VCE(V)
(pF)
10
200
30
Cies
Coes
Cres
40
250
300
f=1MHz
VGE=0
AM08832v1
E
10
0.5
1.5
IC(A)
(µJ)
1.0
2.0
20
Eon
Eoff
2.5
VCE=400V, RG=100
Ω
VGE=15V, TJ=125°C
30
40
50
60
70
AM08889v1
E
30
0
400
RG(
Ω)
(µJ)
200
600
35
Eon
Eoff
800
VCE=400V, IC=1.5A
VGE=15V, TJ=125°C
40
45
50
55
60
AM08890v1
E
10
25
75
TJ(°C)
(µJ)
50
100
Eon
Eoff
VCE=400V, IC=1.5A
VGE=15V, RG=100
Ω
15
20
25
30
35
AM08891v1



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