Table 5. IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 20 A,

VGE = 15 V, RG = 12 Ω

(see Figure 28. Test circuit for

inductive load switching)

26

-

ns

tr

Current rise time

10.8

-

ns

(di/dt)on

Turn-on current slope

1409

-

A/µs

td(off)

Turn-off delay time

108

-

ns

tf

Current fall time

65

-

ns

Eon(1)

Turn-on switching energy

0.14

-

mJ

Eoff(2)

Turn-off switching energy

0.56

-

mJ

Ets

Total switching energy

0.7

-

mJ

td(on)

Turn-on delay time

VCE = 400 V, IC = 20 A,

VGE = 15 V, RG = 12 Ω,

TJ = 175 °C

(see Figure 28. Test circuit for

inductive load switching)

28.4

-

ns

tr

Current rise time

11.2

-

ns

(di/dt)on

Turn-on current slope

1393

-

A/µs

td(off)

Turn-off delay time

107

-

ns

tf

Current fall time

145

-

ns

Eon(1)

Turn-on switching energy

0.3

-

mJ

Eoff(2)

Turn-off switching energy

0.85

-

mJ

Ets

Total switching energy

1.15

-

mJ

tsc

Short-circuit withstand time

VCC = 400 V, VGE = 13 V,

TJstart = 150 °C

10

-

µs

VCC = 400 V, VGE = 15 V,

TJstart = 150 °C

6

-

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 20 A, VR = 400 V,

VGE = 15 V, di/dt = 1000 A/µs

(see Figure 28. Test circuit for

inductive load switching)

-

166

ns

Qrr

Reverse recovery charge

-

690

nC

Irrm

Reverse recovery current

-

13.2

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

769

A/µs

Err

Reverse recovery energy

-

81

µJ

trr

Reverse recovery time

IF = 20 A, VR = 400 V,

VGE = 15 V, TJ = 175 °C,

di/dt = 1000 A/µs

(see Figure 28. Test circuit for

inductive load switching)

-

281

ns

Qrr

Reverse recovery charge

-

2010

nC

Irrm

Reverse recovery current

-

19.6

A

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

-

370

A/µs

Err

Reverse recovery energy

-

215

µJ

STGF20M65DF2

Electrical characteristics

DS11363 - Rev 4

page 4/16