STGP7NB60M - STGD7NB60M

2/11

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

Symbol

Parameter

Value

Unit

TO-220

DPAK

VCES

Collector-Emitter Voltage (VGS =0)

600

V

VGE

Gate-Emitter Voltage

±20

V

IC

Collector Current (continuous) at TC =25°C

14

A

IC

Collector Current (continuous) at TC =100°C

7A

ICM ( )

Collector Current (pulsed)

56

A

PTOT

Total Dissipation at TC = 25°C

80

70

W

Derating Factor

0.64

0.56

W/°C

Tstg

Storage Temperature

– 55 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220

DPAK

Rthj-case

Thermal Resistance Junction-case Max

1.56

1.78

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

100

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES) Collector-Emitter Breakdown

Voltage

IC = 250 µA, VGE =0

600

V

ICES

Collector cut-off

(VGE =0)

VCE = Max Rating, TC =25°C

50

µA

VCE = Max Rating, TC = 125 °C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =± 20V,VCE = 0

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC =250 µA

35

V

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC =7A

1.5

1.9

V

VGE = 15V, IC= 7 A, Tj =125°C

1.2

V