STGWT60V60DF datasheet(3/20 Pages) STMICROELECTRONICS

部件名	STGWT60V60DF

功能描述	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 20 page

DocID024154 Rev 7

3/20

STGW60V60DF, STGWA60V60DF, STGWT60V60DF

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

80(1)

Current level is limited by bond wires

Continuous collector current at TC = 100 °C

ICP

(2)

Pulse width limited by maximum junction temperature.

Pulsed collector current

240

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

80(1)

Continuous forward current at TC = 100 °C

IFP

(2)

Pulsed forward current

240

PTOT

Total dissipation at TC = 25 °C

375

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.4

°C/W

RthJC

Thermal resistance junction-case diode

1.14

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

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