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STGWA40IH65DF 数据表(PDF) 4 Page - STMicroelectronics |
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STGWA40IH65DF 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 15 page ![]() Table 5. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(off) Turn-off delay time VCC = 400 V, IC = 40 A, VGE = 15 V, RG = 22 Ω (see Figure 21. Test circuit for inductive load switching) - 210 - ns tf Current fall time - 12.5 - td(off) Turn-off delay time VCC = 400 V, IC = 40 A, VGE = 15 V, RG = 22 Ω, TJ = 175 °C (see Figure 21. Test circuit for inductive load switching) - 216 - ns tf Current fall time - 47 - ns Table 6. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eoff(1) Turn-off switching energy VCC = 320 V, RG = 10 Ω, IC = 40 A, L = 100 μH, Csnub = 22 nF (see Figure 22. Test circuit for snubbed inductive load switching) - 190 - μJ VCC = 320 V, RG = 10 Ω, IC = 40 A, L = 100 μH, Csnub = 22 nF, TJ = 175 °C (see Figure 22. Test circuit for snubbed inductive load switching) - 385 - 1. Including the tail of the collector current. STGWA40IH65DF Electrical characteristics DS11801 - Rev 3 page 4/15 |
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