STH90N55F4-2 datasheet(3/16 Pages) STMICROELECTRONICS

部件名	STH90N55F4-2

功能描述	N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 16 page

STH90N55F4-2

Electrical ratings

Doc ID 15608 Rev 4

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

360

PTOT

Total dissipation at TC = 25 °C

150

Derating factor

W/°C

EAS

(2)

Starting Tj = 25 °C, ID= 32.5 A, VDD= 45 V

Single pulse avalanche energy

290

Tstg

Storage temperature

– 55 to 175

°C

Max. operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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