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STL100N3LLH7 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL100N3LLH7
功能描述  N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL100N3LLH7 数据表(HTML) 3 Page - STMicroelectronics

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STL100N3LLH7
Electrical characteristics
Doc ID 17663 Rev 1
3/9
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
30
-
-
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
--
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
-
-
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
1
-
-
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 12.5 A
VGS= 4.5 V, ID= 12.5 A
-
0.0025
0.0042
0.0035
0.005
Ω
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
-
3175
430
380
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 25 A
VGS =4.5 V
(see Figure 3)
-
42
TBD
TBD
-
nC
nC
nC
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
-TBD
-
Ω
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=15 V, ID= 12.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 2)
-
TBD
TBD
TBD
TBD
-
ns
ns
ns
ns



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