STL12N10F7 datasheet(4/13 Pages) STMICROELECTRONICS

部件名	STL12N10F7

功能描述	N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 13 page

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

GADG070620181209SOA

102

101

100

10-1

10-2

10-1

100

101

(A)

VDS (V)

tp =100 µs

tp =1 ms

tp =10 ms

Operation in this area

is limited by RDS(on)

Single pulse,

TC = 25 °C, TJ = 150 °C

Figure 2. Thermal impedance

GADG070620181150ZTH

10 -1

10 -2

10 -5

10 -4

10 -3

10 -2

10 -1

tp (s)

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 3. Output characteristics

GADG070620181151OCH

(A)

VDS (V)

VGS = 5 V

VGS = 6 V

VGS = 8, 9, 10 V

VGS = 7 V

Figure 4. Transfer characteristics

GADG070620181151TCH

(A)

VGS (V)

VDS = 6 V

TJ = 25 °C

TJ = 150 °C

TJ = -55 °C

Figure 5. Gate charge vs gate-source voltage

GADG070620181152QVG

VGS

(V)

Qg (nC)

VDS = 50 V

ID = 12 A

Figure 6. Static drain-source on-resistance

GADG070620181152RID

11.40

11.36

11.32

11.28

11.24

11.2

11.16

ID (A)

VGS = 10 V

RDS(on)

(mΩ)

STL12N10F7

Electrical characteristics (curves)

DS12044 - Rev 2

page 4/13

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