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STL20NF20 数据表(PDF) 3 Page - STMicroelectronics |
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STL20NF20 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() Obsolete Product(s) - Obsolete Product(s) STL20NF20 Electrical ratings Doc ID 16905 Rev 1 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 200 V VGS Gate- source voltage ± 20 V ID (1) 1. This value is rated according Rthj-c Drain current (continuous) at TC = 25 °C 15 A ID (1) Drain current (continuous) at TC = 100 °C 11 A ID (3) Drain current (continuous) at TC = 25 °C 2.8 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 12 A PTOT (1) Total dissipation at TC = 25 °C 60 W PTOT (3) 3. This value is according to Rthj-pcb Total dissipation at TC = 25 °C 4 W Derating factor 0.72 W/°C dv/dt (4) 4. ISD ≤ 15 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec Thermal resistance junction-pcb max 31.3 °C Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not- repetitive (pulse width limited by Tj max) 2.8 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 110 mJ |
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