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STL20NF20 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL20NF20
功能描述  N-channel 200 V, 0.10 Ω, 15 A PowerFLAT™ (5x6) low gate charge STripFET™ Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL20NF20 数据表(HTML) 3 Page - STMicroelectronics

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Obsolete
Product(s)
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Product(s)
STL20NF20
Electrical ratings
Doc ID 16905 Rev 1
3/12
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
200
V
VGS
Gate- source voltage
± 20
V
ID
(1)
1.
This value is rated according Rthj-c
Drain current (continuous) at TC = 25 °C
15
A
ID
(1)
Drain current (continuous) at TC = 100 °C
11
A
ID
(3)
Drain current (continuous) at TC = 25 °C
2.8
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
12
A
PTOT
(1)
Total dissipation at TC = 25 °C
60
W
PTOT
(3)
3.
This value is according to Rthj-pcb
Total dissipation at TC = 25 °C
4
W
Derating factor
0.72
W/°C
dv/dt (4)
4.
ISD ≤ 15 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
2.08
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1 inch², 2 oz Cu, t < 10 sec
Thermal resistance junction-pcb max
31.3
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
2.8
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
110
mJ



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