STL8N6LF3

Electrical ratings

DocID027037 Rev 3

3/15

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

60

V

VGS

Gate-source voltage

±20

V

ID(1)

Drain current (continuous) at TC = 25 °C

20

A

ID

Drain current (continuous) at TC = 100 °C

20

A

ID(3)

Drain current (continuous) at Tpcb = 25 °C

7.8

A

ID(3)

Drain current (continuous) at Tpcb = 100 °C

5.5

A

IDM(2)(3)

Drain current (pulsed)

31.2

A

PTOT

Total dissipation at TC = 25 °C

65

W

PTOT(3)

Total dissipation at Tpcb = 25°C

4.3

W

IAS

Not-repetitive avalanche current

7.8

A

EAS(4)

Single pulse avalanche energy

190

mJ

Tj

Operating junction temperature range

-55 to 175

°C

Tstg

Storage temperature range

Notes:

(1)Current is limited by bonding, with an RthJC = 2.3 °C/W the chip is able to carry 30 A at 25 °C.

(2)Pulse width limited by safe operating area.

(3)When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 s.

(4)Starting TJ= 25 °C, ID=IAS, VDD= 25 V.

Table 3: Thermal resitance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.3

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

35

°C/W

Notes:

(1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.