STP75N15 - STB75N15 - STW75N15

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(1) ISD ≤ 75A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Symbol

Parameter

Value

Unit

TO-220/D²PAK

TO-247

VDS

Drain-source Voltage (VGS = 0)

150

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)150

V

VGS

Gate- source Voltage

± 26

V

ID

Drain Current (continuous) at TC = 25°C75

A

ID

Drain Current (continuous) at TC = 100°C48

A

IDM ( )

Drain Current (pulsed)

300

A

PTOT

Total Dissipation at TC = 25°C

300

350

W

Derating Factor

2

2.38

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

TBD

V/ns

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220/D²PAK

TO-247

Unit

Rthj-case

Thermal Resistance Junction-case Max

0.5

0.42

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

TBD

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

TBD

mJ