NPN SILICON EPITAXIAL TRANSISTORS

CSD667

CSD667A

TO-237

BCE

Low Frequency Power Amplifier

Complementary CSB647/A

ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C)

DESCRIPTION

SYMBOL

CSD667

CSD667A

UNIT

Collector -Base Voltage

VCBO

120

120V

Collector -Emitter Voltage

VCEO

80

100V

Emitter Base Voltage

VEBO

5.0

5.0V

Collector Current

IC

1.0

1.0A

Peak

IC

2.0

2.0A

Collector Power Dissipation

PC

0.9

0.9W

Operating And Storage Junction

Tj, Tstg

-55 to +150

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

CSD667 CSD667A

UNIT

Collector -Base Voltage

VCBO

IC=10uA, IE=0

>120

>120V

Collector -Emitter Voltage

VCEO

IC=1mA, IB=0

>80

>100V

Emitter Base Voltage

VEBO

IE=10uA, IC=0

>5.0

>5.0V

Collector Cut off Current

ICBO

VCB=100V, IE=0

<10

<10

uA

DC Current Gain

hFE*

IC=150mA,VCE=5V**

60-320

60-200

IC=500mA,VCE=5V**

>30

>30

Collector Emitter Saturation Voltage

VCE(Sat)

IC=500mA,IB=50mA**

<1.0

<1.0V

Base to Emitter Voltage

VBE

IC=150mA,VCE=5V**

<1.5

<1.5V

Dynamic Characteristics

Gain Bandwidth Product

ft

IC=150mA,VCE=5V**

typ140

typ140

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

typ12

typ12

pF

CLASSIFICATION

B

CD

hFE*

CSD667

60-120

100-200

160-320

hFE*

CSD667A

60-120

100-200-

**Pulse Test

IS / IECQC 700000

IS / IECQC 750100

IS/ISO 9002

Lic# QSC/L- 000019.2

Data Sheet

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