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STP1806 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP1806
功能描述  N-CHANNEL 60V - 0.015 - 50A TO-220 STripFET™ POWER MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP1806 数据表(HTML) 3 Page - STMicroelectronics

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STP1806
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*) Pulse width [ 300 µs, duty cycle 1.5 %.
(
œ) Pulse width limited by safe operating area
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 27.5 A
RG =4.7
W
VGS = 10 V
(Resistive Load, Figure 3)
16
8
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 48 V ID= 55 A VGS= 10V
44.5
10.5
17.5
60
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 30V
ID = 27.5 A
RG =4.7
W,
VGS = 10 V
(Resistive Load, Figure 3)
36
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (
œ)
Source-drain Current
Source-drain Current (pulsed)
50
200
A
A
VSD (*)
Forward On Voltage
ISD = 55A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 55 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
75
170
4.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance



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