June 2016

DocID028290 Rev 2

1/13

This is information on a product in full production.

www.st.com

STP260N4F7

N-

channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7

Power MOSFET in a TO-220 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)max

ID

PTOT

STP260N4F7

40 V

2.2 mΩ

120 A

235 W

Features



Among the lowest RDS(on) on the market



Excellent FoM (figure of merit)



Low Crss/Ciss ratio for EMI immunity



High avalanche ruggedness

Applications



Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

Package

Packaging

STP260N4F7

260N4F7

TO-220

Tube

AM01475v1_Tab

D(2, TAB)

G(1)

S(3)