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TCR3DF13 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TCR3DF13 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 14 page ![]() TCR3DF series 2013-11-15 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 300 mA Power dissipation PD 200 (Note1) mW 580 (Note2) Operation temperature range Topr − 40 to 85 °C Junction temperature Tj 150 °C Storage temperature range Tstg − 55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit Rating Note 2: Rating at mounting on a board (FR4 board: 25.4 mm × 25.4 mm × 1.6 mm) Pin Assignment (top view) SMV(SOT-25)(SC-74A) VOUT CONTROL GND NC VIN 1 3 2 4 5 |
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