Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

January 2009

Rev 1

1/11

11

STS25N3LLH6

N-channel 30 V, 0.0025

Ω, 22 A, SO-8

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

■ Very low switching gate charge

Application

■ Switching applications

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure.The resulting Power

MOSFET exhibits the lowest RDS(on) in a standard

package, that makes it suitable for the most

demanding DC-DC converter applications, where

high power density has to be achieved.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STS25N3LLH6

30 V

0.0032

Ω

22 A

SO-8

Table 1.

Device summary

Order code

Marking

Packag

Packaging

STS25N3LLH6

25G3L

SO-8

Tape and reel

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)

Obsolete

Product(s)

- Obsolete

Product(s)