Characteristics

STTH240F04

2/9

DocID027888 Rev1

1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.85 x IF(AV) + 0.003 IF2(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

400

V

IF(RMS)

Forward rms current

200

A

IF(AV)

Average forward current

Tc = 56 °C, δ = 0.5

120

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

1000

A

Tstg

Storage temperature range

-55 to + 150

°C

Tj

Maximum operating junction temperature(1)

150

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

dP tot

dTj

---------------

1

Rth j

a

–

()

--------------------------

<

Table 3. Thermal resistance parameters

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

Per diode

0.50

°C/W

Total

0.30

Rth(c)

Coupling thermal resistance

0.10

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

85

µA

Tj = 125 °C

85

850

VF

(2)

Forward voltage drop

Tj = 25 °C

IF = 100 A

1.45

V

Tj = 125 °C

0.95

1.20

Tj = 150 °C

0.90

1.15

Tj = 25 °C

IF = 200 A

1.78

Tj = 125 °C

1.20

1.50

Tj = 150 °C

1.15

1.45

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%