STW3N170, STWA3N170

Electrical characteristics

DocID028045 Rev 1

5/14

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

Tj = 25 °C

-

2.6

A

ISDM

Source-drain current

(pulsed)

Tj = 25 °C

-

10.4

A

VSD(1)

Forward on voltage

VGS = 0 V,

ISD = 2.6 A

-

1.5

V

trr

Reverse recovery time

ISD = 2.6 A,

di/dt = 100 A/µs,

VDD = 60 V (see

Figure 16: "Test

circuit for inductive

load switching and

diode recovery

times")

-

1.58

µs

Qrr

Reverse recovery charge

-

6

µC

IRRM

Reverse recovery current

-

7.9

A

trr

Reverse recovery time

ISD = 2.6 A,

di/dt = 100 A/µs,

VDD = 60 V,

Tj = 150 °C (see

Figure 16: "Test

circuit for inductive

load switching and

diode recovery

times")

-

2.12

µs

Qrr

Reverse recovery charge

-

8.8

µC

IRRM

Reverse recovery current

-

8.3

A

Notes:

(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.