2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

V

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

10

μA

VGS = 0 V, VDS = 650 V, TC = 125 °C(1)

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

μA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

3.25

4

4.75

V

RDS(on)

Static drain-source on resistance

VGS = 10 V, ID= 34 A

36

40

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

-

4900

-

pF

Coss

Output capacitance

-

280

-

Crss

Reverse transfer capacitance

-

3

-

Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V

-

859

-

RG

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

-

2.3

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 68 A, VGS = 0 to 10 V (see Figure 14)

-

125

-

nC

Qgs

Gate-source charge

-

33

-

Qgd

Gate-drain charge

-

56

-

1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS

Table 6. Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 34 A, RG = 4.7 Ω , VGS = 10 V (see Figure 13 and

Figure 18)

-

30.4

-

ns

tr

Rise time

-

52

-

ns

td(off)

Turn-off delay time

-

107

-

ns

tf

Fall time

-

10.8

-

ns

STW70N65DM6, STWA70N65DM6

Electrical characteristics

DS12313 - Rev 2

page 3/15