1

Characteristics

Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

TO-220AB, D²PAK Tc = 105 °C

12

A

TO-220AB Ins.

Tc = 90 °C

ITSM

Non repetitive surge peak on-state current (full cycle, Tj

initial = 25 °C)

f = 50 Hz

t = 20 ms

120

A

f = 60 Hz

tp = 16.7 ms

126

I2t

I2t value for fusing

tp = 10 ms

78

A2s

dl/dt

Critical rate of rise of on-state current IG = 2 x IGT, tr ≤

100 ns

f = 120 Hz

Tj = 125 °C

50

A/µs

VDSM/VRSM Non repetitive surge peak off-state voltage

tp = 10 ms

Tj = 25 °C

VDRM / VRRM +

100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ and logic level

(3 quadrants)

Symbol

Parameter

Quadrant

T1205

BTB12-TW

BTA12-TW

T1210

BTB12-SW

BTA12-SW

T1235

BTB12-

CW

BTA12-CW

T1250

BTB12-

BW

BTA12-BW

Unit

IGT (1)

VD = 12 V, RL = 30 Ω

I - II - III

Max.

5

10

35

50

mA

VGT

I - II - III

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C

I - II - III

Min.

0.2

V

IH (2)

IT = 100 mA

I - II - III

Max.

10

15

35

50

mA

IL (2)

IG = 1.2 x IGT

I - III

Max.

10

25

50

70

mA

II

Max.

15

30

60

80

dV/dt (2)

VD = 67% VDRM, gate open, Tj = 125 °C

Max.

20

40

500

1000

V/µs

(dl/dt)c (2)

(dV/dt)c = 0.1 V/µs, Tj = 125 °C

Min.

3.5

6.5

A/ms

(dV/dt)c = 10 V/µs, Tj = 125 °C

Min.

1.0

2.9

Without snubber, Tj = 125 °C

Min.

6.5

12

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

BTA12, BTB12, T1205, T1210, T1235, T1250

Characteristics

DS2115 - Rev 12

page 2/16