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STX13005-AP 数据表(PDF) 4 Page - STMicroelectronics

部件名 STX13005-AP
功能描述  High voltage fast-switching NPN power transistor
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STX13005-AP 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STX13005
4/13
Doc ID 9151 Rev 6
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =0)
VCE =700 V
VCE =700 V TC = 125°C
1
5
mA
mA
ICEO
Collector-cut-off current
(IB = 0)
VCE = 400 V
1mA
V(BR)EBO
Emitter base breakdown
voltage
(IC = 0)
IE = 10 mA
918
V
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤300 µs, duty cycle ≤2 %
Collector-emitter
sustaining voltage
(IB = 0)
IC =10 mA
400
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 1A
_ IB = 200 mA
IC = 2A
_ _ IB = 500 mA
IC = 3A
_ _ IB = 750 mA
0.5
0.6
5
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 1A
_ IB = 200 mA
IC = 2A
_ _ IB = 500 mA
1.2
1.6
V
V
hFE
(1)
DC current gain
IC = 1 A
_
VCE = 5 V
IC = 2 A
_ _
VCE = 5 V
10
8
30
24
ts
tf
Resistive load
Storage time
Fall time
IC = 2 A
VCC = 125 V
IB1 = -IB2 = 400 mA
tp = 30 µs
1.65
260
µs
ns
ts
tf
Inductive load
Storage time
Fall time
IC = 1 A
Vclamp =300 V
IB1 = 200 mA VBE(off) = -5 V
L = 50 mH
RBB = 0
0.8
150
µs
ns



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