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STX13005-AP 数据表(PDF) 4 Page - STMicroelectronics |
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STX13005-AP 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 13 page ![]() Electrical characteristics STX13005 4/13 Doc ID 9151 Rev 6 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE =0) VCE =700 V VCE =700 V TC = 125°C 1 5 mA mA ICEO Collector-cut-off current (IB = 0) VCE = 400 V 1mA V(BR)EBO Emitter base breakdown voltage (IC = 0) IE = 10 mA 918 V VCEO(sus) (1) 1. Pulse test: pulse duration ≤300 µs, duty cycle ≤2 % Collector-emitter sustaining voltage (IB = 0) IC =10 mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 1A _ IB = 200 mA IC = 2A _ _ IB = 500 mA IC = 3A _ _ IB = 750 mA 0.5 0.6 5 V V V VBE(sat) (1) Base-emitter saturation voltage IC = 1A _ IB = 200 mA IC = 2A _ _ IB = 500 mA 1.2 1.6 V V hFE (1) DC current gain IC = 1 A _ VCE = 5 V IC = 2 A _ _ VCE = 5 V 10 8 30 24 ts tf Resistive load Storage time Fall time IC = 2 A VCC = 125 V IB1 = -IB2 = 400 mA tp = 30 µs 1.65 260 µs ns ts tf Inductive load Storage time Fall time IC = 1 A Vclamp =300 V IB1 = 200 mA VBE(off) = -5 V L = 50 mH RBB = 0 0.8 150 µs ns |
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