1

Characteristics

Table 1. Absolute maximum ratings

Symbol

Parameters

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

TO-220AB, D2PAK Tc = 100 °C

16

A

TO-220AB Ins.

Tc = 86 °C

ITSM

Non repetitive surge peak on-state current (full cycle,

Tj initial = 25 °C)

F = 50 Hz

tp = 20 ms

160

A

F = 60 Hz

tp = 16.7 ms

168

I2t

I2t value for fusing

tp = 10 ms

144

A2s

dl/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 125 °C

50

A/µs

VDSM/VRSM Non repetitive surge peak off-state voltage

tp = 10 ms

Tj = 25 °C

VDRM/VRRM +

100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 2. Static electrical characteristics

Symbol

Test conditions

Tj

Value

Unit

VT(1)

ITM = 22.5 A, tp = 380 µs

25 °C

Max.

1.55

V

VTO(1)

threshold on-state voltage

125 °C

Max.

0.85

V

RD(1)

Dynamic resistance

125 °C

Max.

25

mΩ

IDRM/IRRM

VDRM = VRRM

25 °C

Max.

5

µA

125 °C

2

mA

1. For both polarities of A2 referenced to A1

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard (4 quadrants)

Symbol

Parameters

Quadrant

BTA16

BTB16

Unit

C

B

IGT(1)

VD = 12 V, RL = 33 Ω

I - II - III

IV

Max.

25

50

50

100

mA

VGT

All

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C

All

Min.

0.2

V

IH(2)

IT = 500 mA

Max.

25

50

mA

IL

IG = 1.2 IGT

I - III - IV

Max.

40

60

mA

II

Max.

80

120

T1610, T1635, T1650, BTA16, BTB16

Characteristics

DS2114 - Rev 11

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