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APT15GP60B 数据表(PDF) 2 Page - Microsemi Corporation

部件名 APT15GP60B
功能描述  POWER MOS 7 IGBT
PDF  6 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APT15GP60B 数据表(HTML) 2 Page - Microsemi Corporation

  APT15GP60B Datasheet HTML 1Page - Microsemi Corporation APT15GP60B Datasheet HTML 2Page - Microsemi Corporation APT15GP60B Datasheet HTML 3Page - Microsemi Corporation APT15GP60B Datasheet HTML 4Page - Microsemi Corporation APT15GP60B Datasheet HTML 5Page - Microsemi Corporation APT15GP60B Datasheet HTML 6Page - Microsemi Corporation  
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APT15GP60B_S
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 15A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 15A
RG = 5Ω
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 15A
RG = 5Ω
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (With Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (With Diode) 55
Turn-off Switching Energy 66
MIN
TYP
MAX
1685
210
15
7.5
55
12
15
65
8
12
29
58
130
152
121
8
12
69
88
130
267
268
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
UNIT
°C/W
gm
MIN
TYP
MAX
.50
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2 test circuit. (See Figures 21, 22.)
6E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.



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