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CMX90G302QF-R330 数据表(PDF) 14 Page - CML Microcircuits |
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CMX90G302QF-R330 数据表(HTML) 14 Page - CML Microcircuits |
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14 / 16 page ![]() 1.4 - 7.1 GHz Positive Gain Slope Amplifier +2dB CMX90G302 www.cmlmicro.com Page 14 D/90G302/3 September 2022 Thermal Design The primary RF/DC ground and thermal path is via the exposed die pad on the backside of the package, which must be connected to the PCB ground plane. An array of plated through-hole vias directly underneath the die pad area is essential to conduct heat away and minimise ground inductance. A typical solution will have 9 grounding vias connecting the top layer to the bottom layer, with inner diameter of 0.2 mm (and 0.025 mm plating) on 0.5 mm grid pattern. The vias do not need to be filled. The PCB layout should provide a thermal radiator appropriate for the intended operation, adding as much copper to inner and outer layers as possible to avoid excessive junction temperature. Device junction temperature (Tj) can be calculated using Tj = Tc + (Pdiss x Rjc) where Pdiss = Pdc + Pin – Pout and Tc is the case temperature on the backside of the package (die pad) in contact with the PCB. Ven Input The device is enabled by applying a voltage between 1.8 V and 5.0 V to pin 16 (Ven). The resulting Id taken by the device is relatively independent of the Ven voltage applied. If the enable feature is not required, the Ven pin can be connected to the same voltage as Vd. The device can be placed into standby mode when not in use by setting Ven low (<0.2V) to disable all circuitry. If lower Ien and Id leakage current and/or if the highest forward isolation is needed in standby mode, a diode can be used in series with the Ven pin to increase the switch-on threshold of the device. This can be particularly important at elevated temperatures. Some suggested diodes in suitable packages (SOD-523F) for the evaluation board are: - 1N914BWT-D PN fast switching diode - BAT43XV2-D Schottky diode Evaluation Board & Bias Procedure In general, sequencing of the Vd and Ven supplies is not necessary however applying Vd before or simultaneously with Ven is recommended. The separate through line can be used to measure the evaluation board and connector losses. These results can then be used to de-embed the device performance from evaluation board measurements. Figure 34: Insertion Loss – through line Figure 35: Return Loss – through line |
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