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VS-161MT...C 数据表(PDF) 2 Page - Vishay Siliconix

部件名 VS-161MT...C
功能描述  Three Phase Bridge, 160 A (Power Modules)S
PDF  6 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

VS-161MT...C 数据表(HTML) 2 Page - Vishay Siliconix

  VS-161MT...C Datasheet HTML 1Page - Vishay Siliconix VS-161MT...C Datasheet HTML 2Page - Vishay Siliconix VS-161MT...C Datasheet HTML 3Page - Vishay Siliconix VS-161MT...C Datasheet HTML 4Page - Vishay Siliconix VS-161MT...C Datasheet HTML 5Page - Vishay Siliconix VS-161MT...C Datasheet HTML 6Page - Vishay Siliconix  
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VS-161MT...C Series
www.vishay.com
Vishay Semiconductors
Revision: 16-Feb-2022
2
Document Number: 96990
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum DC output current
at case temperature
IO
120° rect. conduction angle
160
A
118
°C
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Initial
TJ = TJ maximum
1540
A
t = 8.3 ms
1610
t = 10 ms
100 % VRRM
reapplied
1295
t = 8.3 ms
1355
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
11 860
A2s
t = 8.3 ms
10 825
t = 10 ms
100 % VRRM
reapplied
8385
t = 8.3 ms
7620
Maximum I2
√t for fusing
I2
√t
t = 0.1 ms to 10 ms, no voltage reapplied
118 580
A2
√s
Low level value of threshold voltage
VFT(TO)1
(16.7 % x
π x IF(AV) < I < π x IF(AV)), TJ maximum
0.81
V
High level value of threshold voltage
VFT(TO)2
(I >
π x IF(AV)), TJ maximum
0.98
Low level value of forward slope resistance
rf1
16.7 % x
π x IF(AV) < I < π x IF(AV), TJ maximum
3.89
m
Ω
High level of forward slope resistance
rf2
(I >
π x IF(AV)), TJ maximum
3.68
Maximum forward voltage drop
VFM
Ipk = 300 A, TJ = 25 °C, per junction
1.85
V
RMS isolation voltage
VISOL
TJ = 25 °C, all terminal shorted f = 50 Hz, t = 1 s
3600
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
TJ
-40 to +150
°C
Maximum storage temperature
TStg
-40 to +125
Maximum thermal resistance,
junction to case
RthJC
DC operation per module
0.058
°C/W
DC operation per junction
0.35
Typical thermal resistance,
case to heatsink
RthCS
Per module
Mounting surface smooth, flat, and greased
0.03
Mounting torque
± 15 %
to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of 3 h to
allow for the spread of the compound. Lubricated
threads.
5
Nm
to terminal
5
Approximate weight
235
g
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VS-161MT...C Series
0.054
0.061
0.076
0.107
0.165
0.039
0.064
0.083
0.111
0.167
°C/W



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