VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series

www.vishay.com

Vishay Semiconductors

Revision: 28-Nov-2019

7

Document Number: 94353

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 17 - Gate Characteristics

ORDERING INFORMATION TABLE

Note

• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION

0.01

94353_17

0.1

1

10

0.001

0.01

0.1

1

Instantaneous Gate Current (A)

1000

100

10

(b)

(a)

(4)

(3)

(2)

(1)

V

GD

I

GD

Frequency Limited by P

G(AV)

5.MT...K, 9.MT...K, 11.MT...K Series

Rectangular gate pulse

a) Recommended load line for

rated dI/dt: 20 V, 30

Ω;

t

r = 0.5 μs, tp ≥ 6 μs

b) Recommended load line for

≤ 30 % rated dI/dt: 20 V, 65

Ω

t

r = 1 μs, tp ≥ 6 μs

(1) P

GM = 100 W, tp = 500 μs

(2) P

GM = 50 W, tp = 1 ms

(3) P

GM = 20 W, tp = 25 ms

(4) P

GM = 10 W, tp = 5 ms

Device code

6

2

1

4

3

7

11

VS-

3

MT

160

K

S90

PbF

5

2

4

7

-

Current rating code:

5 = 55 A (average)

9 = 90 A (average)

11 = 110 A (average)

3

-

Circuit configuration code:

1 = negative half-controlled bridge

2 = positive half-controlled bridge

3 = full-controlled bridge

-Essential part number

1

-Vishay Semiconductors product

5

-

Voltage code x 10 = VRRM (see Voltage Ratings table)

-

PbF = Lead (Pb)-free

6

-

Critical dV/dt:

None = 500 V/μs (standard value)

S90 = 1000 V/μs (special selection)

Full-controlled bridge

(5.MT...K, 9.MT...K, 11.MT..K)

A

D

1

B

EF

C

25

64

3

Positive half-controlled bridge

(5.MT...K, 9.MT...K, 11.MT..K)

AB

C

D

EF

12

5

Negative half-controlled bridge

(5.MT...K, 9.MT...K, 11.MT..K)

64

3

A

DE

F

BC

LINKS TO RELATED DOCUMENTS

Dimensions

www.vishay.com/doc?95004