VS-MB High Voltage Series

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Vishay Semiconductors

Revision: 15-Jan-2019

2

Document Number: 93564

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FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

26MB..A

VALUES

36MB..A

UNITS

Maximum DC output current



at case temperature

IO

Resistive or inductive load

25

35

A

Capacitive load

20

28

65

60

°C

Maximum peak, one cycle

non-repetitive forward current

IFSM

t = 10 ms

No voltage

reapplied

Initial



TJ = TJ maximum

400

475

A

t = 8.3 ms

420

500

t = 10 ms

100 % VRRM

reapplied

335

400

t = 8.3 ms

350

420

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

reapplied

790

1130

A2s

t = 8.3 ms

725

1030

t = 10 ms

100 % VRRM

reapplied

560

800

t = 8.3 ms

512

730

Maximum I2

t for fusing

I2

t

I2t for time tx = I2t x tx;

0.1

 t

x  10 ms, VRRM = 0 V

5.6

11.3

kA2

s

Low level of threshold voltage

VF(TO)1

(16.7 % x

 x I

F(AV) < I <  x IF(AV)), 

TJ maximum

0.70

0.74

V

High level of threshold voltage

VF(TO)2

(I >

 x I

F(AV)), TJ maximum

0.75

0.79

Low level forward slope resistance

rt1

(16.7 % x

 x I

F(AV) < I <  x IF(AV)), 

TJ maximum

7.0

5.5

m



High level forward slope resistance

rt2

(I >

 x I

F(AV)), TJ maximum

6.4

5.2

Maximum forward voltage drop

VFM

TJ = 25 °C, tp = 400 μs, IFM = 40 Apk (26MB),

IFM = 55 Apk (36MB)

1.25

1.3

V

Maximum DC reverse current per diode

IRRM

TJ = 25 °C, at VRRM

10

10

µA

RMS isolation voltage base plate

VISOL

f = 50 Hz, t = 1 s

2700

2700

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

26MB-A

VALUES

36MB-A

UNITS

Junction and storage



temperature range

TJ, TStg

-55 to 150

°C

Maximum thermal resistance,



junction to case per bridge

RthJC

1.7

1.35

K/W

Maximum thermal resistance,



case to heatsink

RthCS

Mounting surface, smooth, flat, and greased

0.2

Mounting torque ± 10 %

Bridge to heatsink

2.0

Nm

Approximate weight

20

g