APT55M85JFLL datasheet(2/4 Pages) ADPOW

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DYNAMIC CHARACTERISTICS

APT55M85JFLL

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -51A)

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -51A, di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -51A, di/dt = 100A/µs)

Peak Recovery Current

(IS = -51A, di/dt = 100A/µs)

Symbol

ISM

VSD

dv/

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

µC

Amps

Symbol

Ciss

Coss

Crss

Qgs

Qgd

td(on)

t r

td(off)

t f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 275V

ID = 59A @ 25°C

VGS = 15V

VDD = 275V

ID = 59A @ 25°C

RG = 0.6Ω

MIN

TYP

MAX

6590

1296

157

UNIT

MIN

TYP

MAX

204

1.3

Tj = 25°C

270

Tj = 125°C

540

Tj = 25°C

1.8

Tj = 125°C

6.2

Tj = 25°C

Tj = 125°C

THERMAL CHARACTERISTICS

Symbol

RθJC

RθJA

MIN

TYP

MAX

0.24

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

4 Starting Tj = +25°C, L = 2.31mH, RG = 25Ω, Peak IL = 51A

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

5dv/

dt numbers reflect the limitations of the test circuit rather than the

device itself. I

S ≤

-51A di/dt ≤ 700A/µs V

R ≤

DSS

J ≤

150

°C

APT Reserves the right to change, without notice, the specifications and information contained herein.

Note:

Duty Factor D =

t1/t

Peak TJ = PDM x ZθJC + TC

SINGLE PULSE

10-5

10-4

10-3

10-2

10-1

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.25

0.20

0.15

0.10

0.05

0.5

0.1

0.3

0.7

0.9

0.05

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