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APTGT200DA170D3 数据表(PDF) 2 Page - Advanced Power Technology

部件名 APTGT200DA170D3
功能描述  Boost chopper Trench IGBT Power Module
PDF  3 Pages
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制造商  ADPOW [Advanced Power Technology]
网页  http://www.advpowertech.com
标志 ADPOW - Advanced Power Technology

APTGT200DA170D3 数据表(HTML) 2 Page - Advanced Power Technology

  APTGT200DA170D3 Datasheet HTML 1Page - Advanced Power Technology APTGT200DA170D3 Datasheet HTML 2Page - Advanced Power Technology APTGT200DA170D3 Datasheet HTML 3Page - Advanced Power Technology  
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APTGT200DA170D3
APT website – http://www.advancedpower.com
2 - 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 7mA
1700
V
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
5
mA
Tj = 25°C
2.0
2.4
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 200A
Tj = 125°C
2.4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 8 mA
5.2
5.8
6.4
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
17
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
0.6
nF
Td(on)
Turn-on Delay Time
250
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
850
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω
120
ns
Td(on)
Turn-on Delay Time
300
Tr
Rise Time
100
Td(off)
Turn-off Delay Time
1000
Tf
Fall Time
200
ns
Eoff
Turn Off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 200A
RG = 6.8Ω
65
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.8
2.2
VF
Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 125°C
1.9
V
Tj = 25°C
25
Er
Reverse Recovery Energy
IF = 200A
VR = 900V
di/dt =900A/µs Tj = 125°C
50
mJ
Tj = 25°C
50
Qrr
Reverse Recovery Charge
IF = 200A
VR = 900V
di/dt =900A/µs Tj = 125°C
85
µC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.10
RthJC
Junction to Case
Diode
0.16
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
3500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
For terminals
M6
3
5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
380
g



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