DF2S10FS

2

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�)

Characteristics

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

Storage temperature

Symbol

VESD

Tj

Tstg

Rating

±30

150

-55 to 150

Unit

kV

�

�

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

4. Electrical Characteristics (Unless otherwise specified, Ta = 25�)

VRWM: Working peak reverse

voltage

VZ: Zener voltage

VBR: Reverse breakdown voltage

ZZ: Dynamic impedance

IZ: Zener current

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

IF: Forward current

VF: Forward voltage

Fig. 4.1

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Zener voltage

(Reverse breakdown voltage)

Dynamic impedance

Reverse current

Total capacitance

Symbol

VRWM

VZ

(VBR)

ZZ

IR

Ct

Note

Test Condition

�

IZ = 5 mA

(IBR)

IZ = 5 mA

(IBR)

VRWM = 8 V

VR = 0 V, f = 1 MHz

Min

�

9.4

�

�

�

Typ.

�

10.0

�

�

16

Max

8

10.6

30

0.5

�

Unit

V

V

Ω

µA

pF

2021-12-16

Rev.4.0

©2021

Toshiba Electronic Devices & Storage Corporation