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VS-ST1230C..K 数据表(PDF) 3 Page - Vishay Siliconix

部件名 VS-ST1230C..K
功能描述  Phase Control Thyristors (Hockey PUK Version), 1745 A
PDF  8 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

VS-ST1230C..K 数据表(HTML) 3 Page - Vishay Siliconix

  VS-ST1230C..K Datasheet HTML 1Page - Vishay Siliconix VS-ST1230C..K Datasheet HTML 2Page - Vishay Siliconix VS-ST1230C..K Datasheet HTML 3Page - Vishay Siliconix VS-ST1230C..K Datasheet HTML 4Page - Vishay Siliconix VS-ST1230C..K Datasheet HTML 5Page - Vishay Siliconix VS-ST1230C..K Datasheet HTML 6Page - Vishay Siliconix VS-ST1230C..K Datasheet HTML 7Page - Vishay Siliconix VS-ST1230C..K Datasheet HTML 8Page - Vishay Siliconix  
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VS-ST1230C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 27-Sep-17
3
Document Number: 94395
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
typ.
Max.
Maximum peak gate power
PGM
TJ = TJ maximum, tp  5 ms
16
W
Maximum average gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz, d% = 50
3
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp  5 ms
3.0
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5.0
DC gate current required to trigger
IGT
TJ = -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
-
mA
TJ = 25 °C
100
200
TJ = 125 °C
50
-
DC gate voltage required to trigger
VGT
TJ = -40 °C
1.4
-
V
TJ = 25 °C
1.1
3.0
TJ = 125 °C
0.9
-
DC gate current not to trigger
IGD
TJ = TJ maximum
Maximum gate current/
voltage not to trigger is the
maximum value which will not
trigger any unit with rated VDRM 
anode to cathode applied
10
mA
DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
TJ
-40 to 125
°C
Maximum storage temperature range
TStg
-40 to 150
Maximum thermal resistance,
junction to heatsink
RthJ-hs
DC operation single side cooled
0.042
K/W
DC operation double side cooled
0.021
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation single side cooled
0.006
DC operation double side cooled
0.003
Mounting force, ± 10 %
24 500
(2500)
N
(kg)
Approximate weight
425
g
Case style
See dimensions - link at the end of datasheet
K-PUK (A-24)
R
thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.003
0.003
0.002
0.002
TJ = TJ maximum
K/W
120°
0.004
0.004
0.004
0.004
90°
0.005
0.005
0.005
0.005
60°
0.007
0.007
0.007
0.007
30°
0.012
0.012
0.012
0.012



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