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APTM50DAM19 数据表(PDF) 1 Page - Advanced Power Technology |
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APTM50DAM19 数据表(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page ![]() APTM50DAM19 APT website – http://www.advancedpower.com 1 – 6 OUT 0/VBUS VBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 500 V Tc = 25°C 163 ID Continuous Drain Current Tc = 80°C 122 IDM Pulsed Drain current 652 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 19 m W PD Maximum Power Dissipation Tc = 25°C 1136 W IAR Avalanche current (repetitive and non repetitive) 46 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 2500 mJ VDSS = 500V RDSon = 19m W max @ Tj = 25°C ID = 163A @ Tc = 25°C Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - M5 power connectors · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Low profile Boost chopper MOSFET Power Module |
类似零件编号 - APTM50DAM19 |
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类似说明 - APTM50DAM19 |
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