MS652.PDF 12-04-03

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MS652/MS652S

RF & MICROWAVE TRANSISTORS

ESCRIPTION

ESCRIPTION

The MS652/MS652S is a 12.5 V Class C epitaxial silicon NPN planar

transistor designed primarily for UHF communications. It withstands severe

mismatch under normal operating conditions.

KEY FEATURES

KEY FEATURES

§ 512 MHz

§ 12.5 Volts

§ Common Emitter

§

§

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

S

§ UHF Portable/Mobile

Applications

ABSOLUTE MAXIMUM RATINGS (T

CASE

= 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

36

V

Collector-Emitter Voltage

16

V

Emitter-Base Voltage

4.0

V

Device Current

2

A

Power Dissipation

25

W

Junction Temperature

+200

°C

Storage Temperature

-65 to +150

°C

THERMAL DATA

Junction-Case Thermal Resistance

7

°C/W

MS652

MS652S