MS652.PDF 12-04-03

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MS652/MS652S

RF & MICROWAVE TRANSISTORS

STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)

MS652S

Symbol

Test Conditions

Min.

Typ.

Max.

Units

36

V

16

V

36

V

4.0

V

1.0

mA

10

150

DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C)

MS652S

Symbol

Test Conditions

Min.

Typ.

Max.

Units

f = 512 MHz

5

W

f = 512 MHz

10

dB

ηη

60

%

f = 1 MHz

15

pF

LARGE SIGNAL IMPEDANCE DATA

Frequency

MHz

Units

400

1.2 + j0.6

6.5 + j6.5

Ω

440

1.2 + j0.9

7.2 + j6.0

Ω

470

1.2 + j1.2

7.7 + j5.3

Ω

512

1.2 + j1.5

8.3 + j4.5

Ω

Conditions

Vcc = 12.5V, Pout = 5W