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MS1007 数据表(PDF) 1 Page - Advanced Power Technology |
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MS1007 数据表(HTML) 1 Page - Advanced Power Technology |
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1 / 4 page ![]() 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1007 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 10 A PDISS Power Dissipation 233 W TJ Junction Temperature +200 °°C TSTG Storage Temperature -65 to +150 °°C Thermal Data Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.75 °°C/W Features Features • 30 MHz • 50 VOLTS • P OUT = 150 WATTS • G P = 14 dB MINIMUM • COMMON EMITTER CONFIGURATION |
类似零件编号 - MS1007 |
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类似说明 - MS1007 |
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