MS2321

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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DESCRIPTION:

SCRIPTION:

The MS2321 is a gold metallized, silicon NPN power transistor

designed for pulsed applications with low duty cycles such as

IFF, DME and TACAN. Internal impedance matching is utilized

for maximum broadband performance and simplified external matching.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

1.5

A

Power Dissipation

87.5

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance

2.0

°°C/W

Features

Features

• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND

TACAN APPLICATIONS

• 20 W (typ.) IFF 1030–1090 MHz

• 15 W (min.) DME 1025–1150 MHz

• 15 W (typ.) TACAN 960–1215 MHz

• 1025 - 1150 MHz

• 50 VOLT OPERATION

• P

• G

• 20:1 VSWR CAPABILITY @ RATED CONDITIONS

• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS