MS2421

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

DESCRIPTION:

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Power Dissipation

875

W

Collector-Emitter Voltage

65

V

Collector-Base Voltage

65

V

Emitter-Base Voltage

3.5

V

Junction Temperature

200

Device Current

22

A

Storage Temperature

-65 to +200

Thermal Data

Thermal Data

Junction-case Thermal Resistance

0.20

°°C/W

Features

• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND

TACAN APPLICATIONS

• 350 W (typ.) IFF 1030 – 1090 MHz

• 300 W (min.) DME 1025 – 1150 MHz

• 290 W (typ.) TACAN 960 – 1215 MHz

• 960 – 1215 MHz

• GOLD METALLIZATION

• P

• G

• INFINITE VSWR CAPABILITY @ RATED CONDITIONS

• EMITTER BALLASTED

• COMMON BASE

The MS2421 is a gold metallized silicon, NPN power transistor

designed for applications requiring high peak power and low duty

cycles such as IFF, DME, and TACAN. The MS2421 is designed

with internal input/output matching resulting in improved

broadband performance and low thermal resistance.

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS