VRF151.PDF 03-23-04

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VRF151

PRELIMINARY INFORMATION

DESCRIPTION:

DESCRIPTION:

The VRF151 is a gold metallized silicon, n-channel RF power

transistor designed for broadband commercial and military

applications requiring high power and gain without compromising

reliability, ruggedness, and intermodulation distortion.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

125

V

Drain-Gate Voltage

125

V

Gate-Source Voltage

±40

V

Drain Current

16

A

Total Device Power Dissipation

300

W

Max Operating Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-Case

0.6

°°C/W

Features

Features

• 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V

• 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V

• EXCELLENT STABILITY & LOW IMD

• COMMON SOURCE CONFIGURATION

• 30:1 LOAD VSWR CAPABILITY AT SPECIFIED

OPERATING CONDITIONS

• NITRIDE PASSIVATED

• REFRACTORY GOLD METALLIZATION

BROADBAND HF/VHF VERTICAL D-MOS

ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS

150W, 50V, 175MHz

N-CHANNEL RF POWER VERTICAL MOSFET

1. DRAIN

3. GATE

2. SOURCE

4. SOURCE