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APTGF200U120D 数据表(PDF) 2 Page - Advanced Power Technology |
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APTGF200U120D 数据表(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page ![]() APTGF200U120D APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 1.5mA 1200 V Tj = 25°C 1.5 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 7.0 mA Tj = 25°C 3.2 3.7 VCE(on) Collector Emitter on Voltage VGE =15V IC = 200A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 4mA 4.5 6.5 V IGES Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V ±300 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 13.8 Coes Output Capacitance 1.32 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 880 nF Qg Total gate Charge 1320 Qge Gate – Emitter Charge 140 Qgc Gate – Collector Charge VGS = 15V VBus = 600V IC = 200A 800 nC Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 320 Tf Fall Time 30 Eon Turn-on Switching Energy 21.6 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A RG = 1.2Ω 9.2 Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 360 Tf Fall Time 40 ns Eon Turn-on Switching Energy 27.9 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A RG = 1.2Ω 12.2 mJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Repetitive Reverse Voltage 1200 IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 240 A IF = 240A 2 2.5 IF = 480A 2.3 VF Diode Forward Voltage IF = 240A Tj = 125°C 1.8 V Tj = 25°C 400 trr Reverse Recovery Time IF = 240A VR = 800V di/dt =800A/µs Tj = 125°C 470 ns Tj = 25°C 4.8 Qrr Reverse Recovery Charge IF = 240A VR = 800V di/dt =800A/µs Tj = 125°C 16 µC |
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