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APTGT200DH120 数据表(PDF) 5 Page - Advanced Power Technology |
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APTGT200DH120 数据表(HTML) 5 Page - Advanced Power Technology |
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5 / 5 page ![]() APTGT200DH120 APT website – http://www.advancedpower.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=25°C TJ=125°C TJ=125°C 0 50 100 150 200 250 300 350 400 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) Hard switching ZCS ZVS 0 10 20 30 40 50 60 0 40 80 120 160 200 240 280 IC (A) VCE=600V D=50% RG=2.7Ω TJ=125°C Tc=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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