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APTM50AM24SC 数据表(PDF) 7 Page - Advanced Power Technology |
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APTM50AM24SC 数据表(HTML) 7 Page - Advanced Power Technology |
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7 / 7 page ![]() APTM50AM24SC APT website – http://www.advancedpower.com 7 – 7 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 40 80 120 160 00.511.522.5 33.5 VF Forward Voltage (V) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 200 400 600 800 1000 1200 1400 1600 200 300 400 500 600 700 800 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 0 500 1000 1500 2000 2500 3000 1 10 100 1000 VR Reverse Voltage APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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