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APTM120A20D 数据表(PDF) 2 Page - Advanced Power Technology |
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APTM120A20D 数据表(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page ![]() APTM120A20D APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1.5mA 1200 V VGS = 0V,VDS = 1200V Tj = 25°C 1.5 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 1000V Tj = 125°C 6 mA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 25A 200 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 6mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±450 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 15.2 Coss Output Capacitance 2.2 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.42 nF Qg Total gate Charge 600 Qgs Gate – Source Charge 84 Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 50A 390 nC Td(on) Turn-on Delay Time 10 Tr Rise Time 10 Td(off) Turn-off Delay Time 68 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 50A RG =0.8Ω 36 ns Eon Turn-on Switching Energy 2.79 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 50A, RG = 0.8Ω 0.6 mJ Eon Turn-on Switching Energy 5.6 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 50A, RG = 0.8Ω 0.81 mJ Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Repetitive Reverse Voltage 1200 V IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 120 A IF = 120A 2 2.5 IF = 2400A 2.3 VF Diode Forward Voltage IF = 120A Tj = 125°C 1.8 V Tj = 25°C 400 trr Reverse Recovery Time IF = 120A VR = 800V di/dt = 400A/µs Tj = 125°C 470 ns Tj = 25°C 2.4 Qrr Reverse Recovery Charge IF = 120A VR = 800V di/dt = 400A/µs Tj = 125°C 8 µC |
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