APTM120TA57FP

APT website – http://www.advancedpower.com

2 – 6

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Drain - Source Breakdown Voltage

1200

V

100

Zero Gate Voltage Drain Current

500

µA

Drain – Source on Resistance

570

m

Ω

Gate Threshold Voltage

3

5

V

Gate – Source Leakage Current

±100

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input Capacitance

5155

Output Capacitance

770

Reverse Transfer Capacitance

f = 1MHz

130

pF

Total gate Charge

187

Gate – Source Charge

24

Gate – Drain Charge

120

nC

Turn-on Delay Time

20

Rise Time

15

Turn-off Delay Time

160

Fall Time

Inductive switching @ 125°C

45

ns

Turn-on Switching Energy

990

Turn-off Switching Energy

Inductive switching @ 25°C

685

µJ

Turn-on Switching Energy

1565

Turn-off Switching Energy

Inductive switching @ 125°C

857

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

17

Continuous Source current

(Body diode)

Tc = 80°C

13

A

Diode Forward Voltage

1.3

V

dv/dt

Peak Diode Recovery

18

V/ns

320

Reverse Recovery Time

650

ns

2

Reverse Recovery Charge

7

µC

In accordance with JEDEC standard JESD24-1.

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

di/dt

≤ 700A/µs